Toshiba MG150Q2YS51

Toshiba MG150Q2YS51 Toshiba MG150Q2YS51

#MG150Q2YS51 Toshiba MG150Q2YS51 New MG150Q2YS51 Toshiba GTR Module Silicon N Channel IGBT (1 PER), MG150Q2YS51 pictures, MG150Q2YS51 price, #MG150Q2YS51 supplier
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MG150Q2YS51 Description

High Power Switching Applications
Motor Control Applications
. High input impedance
. High speed : tf = 0.3µs (Max) @Inductive Load
.Low saturation voltage : VCE (sat) = 3.6V (Max)
.Enhancement-mode
.Includes a complete half bridge in one package.
.The electrodes are isolated from case.
Collector-emitter voltage VCES 1200 V
Gate-emitter voltage VGES ±20 V
Collector current DC IC (25°C / 80°C) 200 / 150A
Collector current 1ms ICP (25°C / 80°C) 400 / 300A
Forward current DC IF 150A
Forward current 1ms IFM 300A
Junction temperature Tj 150 °C
Storage temperature range Tstg −40 ~ 125 °C
Isolation voltage VIsol 2500 (AC 1 min.) V
Screw torque (Terminal / mounting) 3 / 3 N·m
MG150Q2YS51 Toshiba GTR Module Silicon N Channel IGBT (1 PER)

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